IPD70P04P4L08ATMA2
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Specification
封装 | PG-TO-252-3 |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | - 16 V, + 5 V |
Pd-功率耗散 | 75 W |
Rds On-漏源导通电阻 | 9.5 mOhms |
安装方式 | SMD/SMT |
工作温度范围 | - 55 C~+ 175 C |
Id-连续漏极电流 | 70 A |
Vds-漏源极击穿电压 | 40 V |
Qg-栅极电荷 | 71 nC |
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