IPD80R2K8CEATMA1
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Specification
电路数量 | 1 Channel |
长度 | 6.5 mm |
宽度 | 6.22 mm |
Id-连续漏极电流 | 1.9 A |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 150 C |
Rds On-漏源导通电阻 | 2.8 Ohms |
封装 | TO-252-3 |
Vgs - 栅极-源极电压 | 30 V |
Vds-漏源极击穿电压 | 800 V |
Pd-功率耗散 | 42 W |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 12 nC |
高度 | 2.3 mm |
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