IPD80R900P7
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Specification
晶体管极性 | N沟道 |
Vgs - 栅极-源极电压 | 3.5V @ 110uA |
Rds On-漏源导通电阻 | 900mΩ @ 2.2A,10V |
封装 | PG-TO252-3 |
Id-连续漏极电流 | 6A(Tc) |
Pd-功率耗散 | 45W (Tc) |
Vds-漏源极击穿电压 | 800V |
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