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IPD80R900P7ATMA1

Name: IPD80R900P7ATMA1
Brand: Infineon
SKU: R001-IPD80R900P7ATMA1-1-H-0000-X-N
Availability: InStock
Rating: 5 (2 reviews)

Manufacturer:

Infineon

Mfr. Part #:

IPD80R900P7ATMA1

Allchips #:

R001-IPD80R900P7ATMA1-1-H-0000-X-N

Description:

MOSFET N-CH 800V 6A TO252-3

ECAD Model:

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IPD80R900P7ATMA1 Details
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Quality Control

Infineon,IPD80R900P7ATMA1 is available at Allchips.100% original and new guarantee. If comprehensive data for IPD80R900P7ATMA1 to optimize the supply chain, including costdown, time-saving, cross references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected, please contact our professional team.

Specification

RoHS	yes
Technology	Si
Installation style	SMD/SMT
Package / case	DPAK-3
Number of channels	1 Channel
Transistor polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	800 V
Id - continuous drain current	6 A
Rds On - Drain-Source On-Resistance	0.77 Ohms
Vgs th - gate-source threshold voltage	2.5 V
Vgs - gate-source voltage	20 V
Qg - gate charge	15 nC
Minimum working temperature	- 55 C
The maximum working temperature	+ 150 C
Configuration	Single
Channel mode	Enhancement
Fall time	20 ns
Pd - Power Dissipation	45 W
Rise Time	8 ns
Series	CoolMOS P7
Factory packing quantity	2500
Transistor type	1 N-Channel
Typical shutdown delay time	40 ns
Typical turn-on delay time	12 ns

	Ship Fee	Lead Time	Processing Time
DHL	$20.00-$40.00(0.50KG)	2-5 days	Shipping fee depend on different zone and country
UPS	$20.00-$45.00(0.50KG)	2-5 days
TNT	$25.00-$65.00(0.50KG)	2-5 days
EMS	$25.00-$45.00(0.50KG)	4-15 days
Air, Sea/air and Sea	$2.00-$3.00(0.10KG)	7-30 days
FedEX	$20.00-$40.00(0.50KG)	3-7 days