IPD90N04S4-04
In stock
- IPD90N04S4-04 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V |
Id - continuous drain current | 90 A |
Rds On - Drain-Source On-Resistance | 4.1 mOhms |
Vgs th - gate-source threshold voltage | 4 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 33 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 11 ns |
Height | 2.3 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 71 W |
Rise Time | 11 ns |
Series | OptiMOS-T2 |
Factory packing quantity | 2500 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 9 ns |
Typical turn-on delay time | 10 ns |
Width | 6.22 mm |
Unit weight | 4 g |
Others include "IPD90N04S4-04" parts
The following parts include 'IPD90N04S4-04'
- ipd90n04s4l04atma1
- ipd50r399cpatma1
- ipd80r450p7atma1
- ipd65r650ceauma1
- ipd031n03l g
- ipd65r600e6atma
- ipd3018-76
- ipd65r380e6atma1
- ipd90p03p4l04atma
- ipd60r180p7atma1
- ipd25n06s240atma2
- ipd95r2k0p7atma1
- ipd60n10s412atma
- ipd096n08n3gatma
- ipd50r650ce
- ipd60r600p7atma1
- ipd65r400ceauma1
- ipd90p04p4l04atma1
- ipd3012-76
- ipd5019-760
IPD90N04S4-04 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPD90N04S4-03
Infineon
Learn More >
-
-
-
IPD90N04S4-04
Infineon
Learn More >
-
-
-
IPD90N04S4-03
Infineon
Learn More >
-
-
-
IPD90N04S4-02
Infineon
Learn More >
-
-
-
IPD90N04S4-05
Infineon
MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
Learn More >
-
-
-
B39871B4377P810
Qualcomm / RF360
Learn More >
-
-
-
B39921B2625P810
Qualcomm / RF360
Learn More >
-
-
-
B39921B4344P810
Qualcomm / RF360
Learn More >
-
- View All Newest Products from Omron