IPD90P03P4L04ATMA2
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Specification
Vds-漏源极击穿电压 | 30 V |
安装方式 | SMD/SMT |
Pd-功率耗散 | 137 W |
工作温度范围 | - 55 C~+ 175 C |
Rds On-漏源导通电阻 | 4.1 mOhms |
Qg-栅极电荷 | 125 nC |
封装 | TO-252-3 |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 90 A |
Vgs - 栅极-源极电压 | - 16 V, + 5 V |
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