IPD95R450P7ATMA1
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Specification
封装 | DPAK-3 |
Qg-栅极电荷 | 35 nC |
Rds On-漏源导通电阻 | 450 mOhms |
Vds-漏源极击穿电压 | 950 V |
安装方式 | SMD/SMT |
Pd-功率耗散 | 104 W |
工作温度范围 | - 55 C~+ 150 C |
电路数量 | 1 Channel |
Id-连续漏极电流 | 14 A |
Vgs - 栅极-源极电压 | 20 V |
晶体管极性 | MOSFET |
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IPD95R450P7ATMA1
Infineon
表面贴装型 N 通道 950V 14A(Tc) 104W(Tc) PG-TO252-3
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