IPDD60R190G7XTMA1
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Specification
封装 | PG-HDSOP-10 |
Id-连续漏极电流 | 13 A |
Vgs - 栅极-源极电压 | 20 V |
安装方式 | SMD/SMT |
Rds On-漏源导通电阻 | 190 mOhms |
Qg-栅极电荷 | 18 nC |
晶体管极性 | MOSFET |
Pd-功率耗散 | 76 W |
Vds-漏源极击穿电压 | 600 V |
电路数量 | 1 Channel |
工作温度范围 | - 55 C~+ 150 C |
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IPDD60R190G7XTMA1
Infineon
表面贴装型 N 通道 600V 13A(Tc) 76W(Tc) PG-HDSOP-10-1
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