IPG16N10S4-61
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TDSON-8 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V, 100 V |
Id - continuous drain current | 16 A, 16 A |
Rds On - Drain-Source On-Resistance | 53 mOhms, 53 mOhms |
Vgs th - gate-source threshold voltage | 2 V, 2 V |
Vgs - gate-source voltage | 20 V, 20 V |
Qg - gate charge | 7 nC, 7 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Dual |
Qualifications | AEC-Q100 |
Channel mode | Enhancement |
Fall time | 5 ns, 5 ns |
Height | 1.27 mm |
Length | 5.9 mm |
Pd - Power Dissipation | 29 W |
Rise Time | 1 ns, 1 ns |
Series | XPG16N10 |
Factory packing quantity | 5000 |
Transistor type | 2 N-Channel |
Typical shutdown delay time | 5 ns, 5 ns |
Typical turn-on delay time | 3 ns, 3 ns |
Width | 5.15 mm |
Unit weight | 100 mg |
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