IPG20N04S4-08
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TDSON-8 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 40 V, 40 V |
Id - continuous drain current | 20 A |
Rds On - Drain-Source On-Resistance | 7.6 mOhms |
Vgs - gate-source voltage | 20 V |
The maximum working temperature | + 175 C |
Configuration | Dual |
Qualifications | AEC-Q100 |
Height | 1.27 mm |
Length | 5.9 mm |
Pd - Power Dissipation | 65 W |
Series | OptiMOS-T2 |
Factory packing quantity | 5000 |
Transistor type | 2 N-Channel |
Width | 5.15 mm |
Unit weight | 200 mg |
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