IPG20N10S4L22AATMA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TDSON-8 |
Number of channels | 2 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V, 100 V |
Id - continuous drain current | 20 A, 20 A |
Rds On - Drain-Source On-Resistance | 20 mOhms, 20 mOhms |
Vgs th - gate-source threshold voltage | 1.1 V, 1.1 V |
Vgs - gate-source voltage | 16 V, 16 V |
Qg - gate charge | 27 nC, 27 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Dual |
Channel mode | Enhancement |
Fall time | 18 ns, 18 ns |
Height | 1.27 mm |
Length | 5.9 mm |
Pd - Power Dissipation | 60 W |
Rise Time | 3 ns, 3 ns |
Factory packing quantity | 5000 |
Transistor type | 2 N-Channel |
Typical shutdown delay time | 30 ns, 30 ns |
Typical turn-on delay time | 5 ns, 5 ns |
Width | 5.15 mm |
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