IPG20N10S4L35ATMA1
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Specification
Vds-漏源极击穿电压 | 100 V |
资格等级 | AEC-Q101 |
安装方式 | SMD/SMT |
Qg-栅极电荷 | 17.4 nC, 17.4 nC |
高度 | 1.27 mm |
Id-连续漏极电流 | 20 A |
封装 | TDSON-8 |
电路数量 | 2 Channel |
长度 | 5.9 mm |
晶体管极性 | MOSFET |
工作温度范围 | - 55 C~+ 175 C |
Rds On-漏源导通电阻 | 29 mOhms, 29 mOhms |
Vgs - 栅极-源极电压 | 16 V |
宽度 | 5.15 mm |
Pd-功率耗散 | 43 W |
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