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IPI084N06L3GXKSA1
Manufacturer:
Mfr. Part #:
IPI084N06L3GXKSA1
Allchips #:
R001-IPI084N06L3GXKSA1-1-H-1401-X-N
Description:
Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-262 Tube
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | Through Hole |
| Package / case | TO-262-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Id - continuous drain current | 50 A |
| Rds On - Drain-Source On-Resistance | 7 mOhms |
| Vgs th - gate-source threshold voltage | 1.2 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 29 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 175 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 7 ns |
| Forward transconductance - minimum | 35 S |
| Height | 9.45 mm |
| Length | 10.2 mm |
| Pd - Power Dissipation | 79 W |
| Rise Time | 26 ns |
| Series | OptiMOS 3 |
| Factory packing quantity | 500 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 37 ns |
| Typical turn-on delay time | 15 ns |
| Width | 4.5 mm |
| Unit weight | 2.084 g |
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