IPI65R190CFDXKSA1
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Specification
Vds-漏源极击穿电压 | 650V |
Pd-功率耗散 | 151W(Tc) |
封装 | TO-262-3,长引线,I²Pak,TO-262AA |
安装方式 | 通孔 |
工作温度范围 | -55°C~150°C(TJ) |
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Trans MOSFET N-CH 650V 17.5A 3-Pin(3+Tab) TO-262 Tube
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