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IPL60R650P6SATMA1
Manufacturer:
Mfr. Part #:
IPL60R650P6SATMA1
Allchips #:
R001-IPL60R650P6SATMA1-1-H-0000-X-Y
Description:
N沟道,600V,6.7A,650mΩ@10V
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | ThinPAK-56-8 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - continuous drain current | 6.7 A |
| Rds On - Drain-Source On-Resistance | 650 mOhms |
| Vgs th - gate-source threshold voltage | 4 V |
| Vgs - gate-source voltage | 30 V |
| Qg - gate charge | 12 nC |
| Minimum working temperature | - 40 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Qualifications | AEC-Q100 |
| Fall time | 14 ns |
| Height | 1.1 mm |
| Length | 6 mm |
| Pd - Power Dissipation | 56.8 W |
| Rise Time | 7 ns |
| Series | CoolMOS P6 |
| Factory packing quantity | 5000 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 33 ns |
| Typical turn-on delay time | 11 ns |
| Width | 5 mm |
| Unit weight | 76 mg |
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