IPL65R1K0C6SATMA1
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Mfr. Part #:
IPL65R1K0C6SATMA1
Allchips #:
R001-IPL65R1K0C6SATMA1-1-H-2101-X-N
Description:
IPL65R1K0C6SATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 650V 4.2A 8-Pin Thin-PAK EP T/R - Arrow.com
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Specification
封装 | PG-TSON-8-2 |
电路数量 | 1 Channel |
安装方式 | SMD/SMT |
工作温度范围 | - 40 C~+ 150 C |
长度 | 6 mm |
宽度 | 5 mm |
Id-连续漏极电流 | 4.2 A |
Qg-栅极电荷 | 15 nC |
高度 | 1.1 mm |
晶体管极性 | MOSFET |
Vgs - 栅极-源极电压 | 30 V |
Pd-功率耗散 | 34.7 W |
Vds-漏源极击穿电压 | 650 V |
Rds On-漏源导通电阻 | 1 Ohms |
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