IPL65R1K5C6SATMA1
Manufacturer:
Mfr. Part #:
IPL65R1K5C6SATMA1
Allchips #:
R001-IPL65R1K5C6SATMA1-1-H-2345-X-N
Description:
Trans MOSFET N-CH 650V 3A 8-Pin Thin-PAK EP T/R
Delivery:
Payment:
PayPal, Credit Card, Wire Transfer, Western Union
In stock
- IPL65R1K5C6SATMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Infineon,IPL65R1K5C6SATMA1 is available at Allchips.100% original and new guarantee. If
comprehensive data for IPL65R1K5C6SATMA1 to optimize the supply chain, including costdown, time-saving, cross
references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected,
please contact our professional team.
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | ThinPAK-56-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - continuous drain current | 3 A |
Rds On - Drain-Source On-Resistance | 1.5 Ohms |
Vgs th - gate-source threshold voltage | 3 V |
Vgs - gate-source voltage | 30 V |
Qg - gate charge | 11 nC |
Minimum working temperature | - 40 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Fall time | 18.2 ns |
Height | 1.1 mm |
Length | 6 mm |
Pd - Power Dissipation | 26.6 W |
Rise Time | 5.9 ns |
Series | CoolMOS C6 |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 33 ns |
Typical turn-on delay time | 7.7 ns |
Width | 5 mm |
Unit weight | 76 mg |
Others include "IPL65R1K5C6SATMA1" parts
The following parts include 'IPL65R1K5C6SATMA1'
IPL65R1K5C6SATMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search