IPL65R1K5C6SATMA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | ThinPAK-56-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - continuous drain current | 3 A |
Rds On - Drain-Source On-Resistance | 1.5 Ohms |
Vgs th - gate-source threshold voltage | 3 V |
Vgs - gate-source voltage | 30 V |
Qg - gate charge | 11 nC |
Minimum working temperature | - 40 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Qualifications | AEC-Q100 |
Fall time | 18.2 ns |
Height | 1.1 mm |
Length | 6 mm |
Pd - Power Dissipation | 26.6 W |
Rise Time | 5.9 ns |
Series | CoolMOS C6 |
Factory packing quantity | 5000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 33 ns |
Typical turn-on delay time | 7.7 ns |
Width | 5 mm |
Unit weight | 76 mg |
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