IPN50R2K0CEATMA1
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Specification
Rds On-漏源导通电阻 | 4.68 Ohms |
Pd-功率耗散 | 5 W |
工作温度范围 | - 40 C~+ 150 C |
Qg-栅极电荷 | 6 nC |
高度 | 1.6 mm |
电路数量 | 1 Channel |
长度 | 6.5 mm |
宽度 | 3.5 mm |
Vgs - 栅极-源极电压 | 20 V |
封装 | SOT-223-3 |
安装方式 | SMD/SMT |
晶体管极性 | MOSFET |
Id-连续漏极电流 | 2.4 A |
Vds-漏源极击穿电压 | 500 V |
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