IPN70R1K0CEATMA1
Manufacturer:
Mfr. Part #:
IPN70R1K0CEATMA1
Allchips #:
R001-IPN70R1K0CEATMA1-1-H-0000-X-Y
Description:
MOSFET N-CH 750V 7.4A SOT223
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | SOT-223-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 700 V |
Id - continuous drain current | 7.4 A |
Rds On - Drain-Source On-Resistance | 0.9 Ohms |
Vgs th - gate-source threshold voltage | 2.5 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 14.9 nC |
Minimum working temperature | - 40 C |
The maximum working temperature | + 150 C |
Configuration | 1 N-Channel |
Channel mode | Enhancement |
Fall time | 13.6 ns |
Pd - Power Dissipation | 5 W |
Rise Time | 5.2 ns |
Factory packing quantity | 3000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 41 ns |
Typical turn-on delay time | 6.6 ns |
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