IPN70R450P7SATMA1
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Specification
封装 | SOT-223-3 |
Id-连续漏极电流 | 10 A |
Vds-漏源极击穿电压 | 700 V |
电路数量 | 1 Channel |
Qg-栅极电荷 | 13.1 nC |
Pd-功率耗散 | 7.1 W |
晶体管极性 | MOSFET |
工作温度范围 | - 40 C~+ 150 C |
Rds On-漏源导通电阻 | 370 mOhms |
安装方式 | SMD/SMT |
Vgs - 栅极-源极电压 | 16 V |
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