IPP04CN10NGXKSA1
Manufacturer:
Mfr. Part #:
IPP04CN10NGXKSA1
Allchips #:
R001-IPP04CN10NGXKSA1-1-H-0000-X-Y
Description:
MV POWER MOS
Delivery:
Payment:
PayPal, Credit Card, Wire Transfer, Western Union
In stock
- IPP04CN10NGXKSA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Infineon,IPP04CN10NGXKSA1 is available at Allchips.100% original and new guarantee. If
comprehensive data for IPP04CN10NGXKSA1 to optimize the supply chain, including costdown, time-saving, cross
references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected,
please contact our professional team.
Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 100 A |
Rds On - Drain-Source On-Resistance | 3.9 mOhms |
Vgs - gate-source voltage | 20 V |
Configuration | Single |
Height | 15.65 mm |
Length | 10 mm |
Pd - Power Dissipation | 300 W |
Series | OptiMOS 2 |
Factory packing quantity | 500 |
Transistor type | 1 N-Channel |
Width | 4.4 mm |
Unit weight | 6 g |
Others include "IPP04CN10NGXKSA1" parts
The following parts include 'IPP04CN10NGXKSA1'
IPP04CN10NGXKSA1 Releted Information
- Hot sale
- Related Categories
- Popular Search