IPP052NE7N3GXKSA1
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Specification
晶体管极性 | 分立半导体产品,晶体管-FET,MOSFET-单个 |
Vgs - 栅极-源极电压 | 3.8V @ 91uA |
封装 | PG-TO220-3-1 |
Rds On-漏源导通电阻 | 5.2mΩ @ 80A,10V |
Vds-漏源极击穿电压 | 75V |
安装方式 | 通孔 |
Pd-功率耗散 | 150W(Tc) |
工作温度范围 | -55°C~175°C(TJ) |
Id-连续漏极电流 | 80A(Tc) |
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