IPP114N12N3 G
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 120 V |
Id - continuous drain current | 75 A |
Rds On - Drain-Source On-Resistance | 11.4 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 49 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Fall time | 7 nS |
Height | 15.65 mm |
Length | 10 mm |
Pd - Power Dissipation | 136 W |
Rise Time | 36 nS |
Series | OptiMOS 3 |
Factory packing quantity | 500 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 30 nS |
Width | 4.4 mm |
Unit weight | 6 g |
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