Pictures for reference only, please check the datasheet
IPP126N10N3GXKSA1
Manufacturer:
Mfr. Part #:
IPP126N10N3GXKSA1
Allchips #:
R001-IPP126N10N3GXKSA1-1-H-0000-X-Y
Description:
通孔 N 通道 100V 58A（Tc） 94W（Tc） PG-TO220-3
ECAD Model:
Delivery:
Payment:
PayPal, Credit Card, Wire Transfer, Western Union
In stock
- IPP126N10N3GXKSA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Infineon,IPP126N10N3GXKSA1 is available at Allchips.100% original and new guarantee. If
comprehensive data for IPP126N10N3GXKSA1 to optimize the supply chain, including costdown, time-saving, cross
references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected,
please contact our professional team.
Specification
| RoHS | yes |
| Technology | Si |
| Installation style | Through Hole |
| Package / case | TO-220-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - continuous drain current | 58 A |
| Rds On - Drain-Source On-Resistance | 11 mOhms |
| Vgs th - gate-source threshold voltage | 2 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 35 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 175 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 5 ns |
| Forward transconductance - minimum | 29 S |
| Height | 15.65 mm |
| Length | 10 mm |
| Pd - Power Dissipation | 94 W |
| Rise Time | 8 ns |
| Series | OptiMOS 3 |
| Factory packing quantity | 500 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 24 ns |
| Typical turn-on delay time | 14 ns |
| Width | 4.4 mm |
| Unit weight | 6 g |
Others include "IPP126N10N3GXKSA1" parts
The following parts include 'IPP126N10N3GXKSA1'
IPP126N10N3GXKSA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
