IPP50R199CPXKSA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 500 V |
Id - continuous drain current | 17 A |
Rds On - Drain-Source On-Resistance | 180 mOhms |
Vgs th - gate-source threshold voltage | 3 V |
Qg - gate charge | 34 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Fall time | 10 ns |
Height | 15.65 mm |
Length | 10 mm |
Pd - Power Dissipation | 139 W |
Rise Time | 14 ns |
Series | CoolMOS CE |
Factory packing quantity | 500 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 80 ns |
Typical turn-on delay time | 35 ns |
Width | 4.4 mm |
Unit weight | 6 g |
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IPP50R199CPXKSA1
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通孔 N 通道 550V 17A(Tc) 139W(Tc) PG-TO220-3-1
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