IPP60R125P6XKSA1
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Specification
Rds On-漏源导通电阻 | 113 mOhms |
晶体管极性 | MOSFET |
Qg-栅极电荷 | 56 nC |
高度 | 15.65 mm |
封装 | TO-220-3 |
长度 | 10 mm |
电路数量 | 1 Channel |
安装方式 | Through Hole |
Vgs - 栅极-源极电压 | 20 V |
宽度 | 4.4 mm |
Id-连续漏极电流 | 30 A |
Pd-功率耗散 | 219 W |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 600 V |
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IPP60R125P6XKSA1
Infineon
通孔 N 通道 600V 30A(Tc) 219W(Tc) PG-TO220-3
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