IPP65R110CFDAAKSA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - continuous drain current | 31.2 A |
Rds On - Drain-Source On-Resistance | 110 mOhms |
Configuration | Single |
Qualifications | AEC-Q100 |
Height | 15.65 mm |
Length | 10 mm |
Series | CoolMOS CFDA |
Factory packing quantity | 500 |
Transistor type | 1 N-Channel |
Width | 4.4 mm |
Unit weight | 6 g |
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IPP65R110CFDAAKSA1
Infineon
通孔 N 通道 650V 31.2A(Tc) 277.8W(Tc) PG-TO220-3
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