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IPP80N06S209AKSA2
Manufacturer:
Mfr. Part #:
IPP80N06S209AKSA2
Allchips #:
R001-IPP80N06S209AKSA2-1-H-1845-X-Y
Description:
通孔 N 通道 55V 80A（Tc） 190W（Tc） PG-TO220-3-1
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | Through Hole |
| Package / case | TO-220-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Id - continuous drain current | 80 A |
| Rds On - Drain-Source On-Resistance | 7.6 mOhms |
| Vgs th - gate-source threshold voltage | 2.1 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 80 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 175 C |
| Configuration | Single |
| Qualifications | AEC-Q100 |
| Channel mode | Enhancement |
| Fall time | 28 ns |
| Height | 15.65 mm |
| Length | 10 mm |
| Pd - Power Dissipation | 190 W |
| Rise Time | 29 ns |
| Factory packing quantity | 500 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 39 ns |
| Typical turn-on delay time | 14 ns |
| Width | 4.4 mm |
| Unit weight | 6 g |
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