IPS60R1K0PFD7SAKMA1
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Specification
Vds-漏源极击穿电压 | 650V |
封装 | PG-TO251-3 |
安装方式 | 通孔 |
晶体管极性 | 分立半导体产品,晶体管-FET,MOSFET-单个 |
工作温度范围 | -40°C~150°C(TJ) |
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IPS60R1K0PFD7SAKMA1
Infineon
通孔 N 通道 650V 4.7A(Tc) 26W(Tc) PG-TO251-3
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