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IPS65R1K5CEAKMA1
Manufacturer:
Mfr. Part #:
IPS65R1K5CEAKMA1
Allchips #:
R001-IPS65R1K5CEAKMA1-1-H-0000-X-Y
Description:
MOSFET N-CH 650V TO-251-3
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | TO-251-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - continuous drain current | 3.1 A |
| Rds On - Drain-Source On-Resistance | 1.5 Ohms |
| Vgs th - gate-source threshold voltage | 2.5 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 10.5 nC |
| Minimum working temperature | - 40 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Qualifications | AEC-Q100 |
| Channel mode | Enhancement |
| Fall time | 18.2 ns |
| Height | 6.22 mm |
| Length | 6.73 mm |
| Pd - Power Dissipation | 28 W |
| Rise Time | 5.9 ns |
| Series | CoolMOS CE |
| Factory packing quantity | 1500 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 33 ns |
| Typical turn-on delay time | 7.7 ns |
| Width | 2.38 mm |
| Unit weight | 343.100 mg |
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