IPS65R950C6
Manufacturer:
Mfr. Part #:
IPS65R950C6
Allchips #:
R001-IPS65R950C6-1-H-0000-X-N
Description:
Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-251 Tube
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-251-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Id - continuous drain current | 4.5 A |
Rds On - Drain-Source On-Resistance | 855 mOhms |
Vgs th - gate-source threshold voltage | 2.5 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 15.3 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 13.6 ns |
Height | 6.22 mm |
Length | 6.73 mm |
Pd - Power Dissipation | 37 W |
Rise Time | 5.2 ns |
Series | CoolMOS C6 |
Factory packing quantity | 1500 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 41 ns |
Typical turn-on delay time | 6.6 ns |
Width | 2.38 mm |
Unit weight | 340 mg |
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