IPSA70R2K0P7SAKMA1
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Specification
Vgs - 栅极-源极电压 | 16 V |
Id-连续漏极电流 | 3 A |
安装方式 | Through Hole |
晶体管极性 | MOSFET |
封装 | PG-TO-251-3 |
电路数量 | 1 Channel |
Pd-功率耗散 | 17.6 W |
工作温度范围 | - 40 C~+ 150 C |
Vds-漏源极击穿电压 | 700 V |
Qg-栅极电荷 | 3.8 nC |
Rds On-漏源导通电阻 | 1.64 Ohms |
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