IPT111N20NFDATMA1
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Specification
RoHS | yes |
Technology | Si |
Package / case | HSOF-8 |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 200 V |
Series | OptiMOS Fast Diode |
Factory packing quantity | 2000 |
Unit weight | 65 mg |
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