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IPT60R125G7XTMA1
Manufacturer:
Mfr. Part #:
IPT60R125G7XTMA1
Allchips #:
R001-IPT60R125G7XTMA1-1-H-0000-X-Y
Description:
表面贴装型 N 通道 650V 20A（Tc） 120W（Tc） PG-HSOF-8-2
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | HSOF-8 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Id - continuous drain current | 20 A |
| Rds On - Drain-Source On-Resistance | 108 mOhms |
| Vgs th - gate-source threshold voltage | 3 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 27 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 5 ns |
| Pd - Power Dissipation | 120 W |
| Rise Time | 5 ns |
| Factory packing quantity | 2000 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 60 ns |
| Typical turn-on delay time | 18 ns |
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