IPT60R150G7XTMA1
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | HSOF-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - continuous drain current | 17 A |
Rds On - Drain-Source On-Resistance | 129 mOhms |
Vgs th - gate-source threshold voltage | 3 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 23 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 6 ns |
Pd - Power Dissipation | 106 W |
Rise Time | 5 ns |
Factory packing quantity | 2000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 56 ns |
Typical turn-on delay time | 17 ns |
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IPT60R150G7XTMA1
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表面贴装型 N 通道 650V 17A(Tc) 106W(Tc) PG-HSOF-8-2
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