IPT60R150G7XTMA1
Manufacturer:
Mfr. Part #:
IPT60R150G7XTMA1
Allchips #:
R001-IPT60R150G7XTMA1-1-H-0000-X-Y
Description:
表面贴装型 N 通道 650V 17A(Tc) 106W(Tc) PG-HSOF-8-2
Delivery:
Payment:
PayPal, Credit Card, Wire Transfer, Western Union
In stock
- IPT60R150G7XTMA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Infineon,IPT60R150G7XTMA1 is available at Allchips.100% original and new guarantee. If
comprehensive data for IPT60R150G7XTMA1 to optimize the supply chain, including costdown, time-saving, cross
references, parametric, counterfeit risk, alternative components, obsolescence management forecasts is expected,
please contact our professional team.
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | HSOF-8 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - continuous drain current | 17 A |
Rds On - Drain-Source On-Resistance | 129 mOhms |
Vgs th - gate-source threshold voltage | 3 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 23 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 6 ns |
Pd - Power Dissipation | 106 W |
Rise Time | 5 ns |
Factory packing quantity | 2000 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 56 ns |
Typical turn-on delay time | 17 ns |
Others include "IPT60R150G7XTMA1" parts
The following parts include 'IPT60R150G7XTMA1'
IPT60R150G7XTMA1 Releted Information
- Hot sale
- Related Categories
- Popular Search