IPW60R037P7XKSA1
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Specification
Vgs - 栅极-源极电压 | 20 V |
安装方式 | Through Hole |
Pd-功率耗散 | 255 W |
Qg-栅极电荷 | 121 nC |
电路数量 | 1 Channel |
工作温度范围 | - 55 C~+ 150 C |
Vds-漏源极击穿电压 | 600 V |
Id-连续漏极电流 | 76 A |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 30 mOhms |
封装 | TO-247-3 |
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IPW60R037P7XKSA1
Infineon
Trans MOSFET N-CH 600V 76A 3-Pin(3+Tab) TO-247 Tube
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IPW60R037P7XKSA1
Infineon
Trans MOSFET N-CH 600V 76A 3-Pin(3+Tab) TO-247 Tube
Learn More >
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IPW60R037P7XKSA1
Infineon
Trans MOSFET N-CH 600V 76A 3-Pin(3+Tab) TO-247 Tube
Learn More >
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IPW60R037P7XKSA1
Infineon
Trans MOSFET N-CH 600V 76A 3-Pin(3+Tab) TO-247 Tube
Learn More >
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