IPW60R060C7XKSA1
In stock
- IPW60R060C7XKSA1 Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-247-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - continuous drain current | 35 A |
Rds On - Drain-Source On-Resistance | 52 mOhms |
Vgs th - gate-source threshold voltage | 3 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 68 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 4 ns |
Height | 21.1 mm |
Length | 16.13 mm |
Pd - Power Dissipation | 162 W |
Rise Time | 11 ns |
Series | CoolMOS C7 |
Factory packing quantity | 240 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 79 ns |
Typical turn-on delay time | 15.5 ns |
Width | 5.21 mm |
Unit weight | 6 g |
Others include "IPW60R060C7XKSA1" parts
The following parts include 'IPW60R060C7XKSA1'
IPW60R060C7XKSA1 Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IPW60R060C7XKSA1
Infineon
通孔 N 通道 600V 35A(Tc) 162W(Tc) PG-TO247-3
Learn More >
-
-
-
IPW60R060C7XKSA1
Infineon
Trans MOSFET N-CH 600V 35A 3-Pin(3+Tab) TO-247 Tube
Learn More >
-
- View All Newest Products from Omron