IPW60R190C6
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Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-247-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - continuous drain current | 20.2 A |
Rds On - Drain-Source On-Resistance | 190 mOhms |
Vgs - gate-source voltage | 20 V |
Minimum working temperature | - 55 C |
The maximum working temperature | + 150 C |
Configuration | Single |
Height | 21.1 mm |
Length | 16.13 mm |
Pd - Power Dissipation | 151 W |
Series | CoolMOS C6 |
Factory packing quantity | 240 |
Transistor type | 1 N-Channel |
Width | 5.21 mm |
Unit weight | 38 g |
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