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IPW65R048CFDAFKSA1
Manufacturer:
Mfr. Part #:
IPW65R048CFDAFKSA1
Allchips #:
R001-IPW65R048CFDAFKSA1-1-H-0000-X-Y
Description:
N-Channel 650V 63.3A (Tc) 500W (Tc) Through Hole PG-TO247-3
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | Through Hole |
| Package / case | TO-247-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - continuous drain current | 63.3 A |
| Rds On - Drain-Source On-Resistance | 43 mOhms |
| Vgs th - gate-source threshold voltage | 3.5 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 270 nC |
| Minimum working temperature | - 40 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 4 ns |
| Height | 21.1 mm |
| Length | 16.13 mm |
| Pd - Power Dissipation | 500 W |
| Rise Time | 10 ns |
| Series | CoolMOS CFDA |
| Factory packing quantity | 240 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 85 ns |
| Typical turn-on delay time | 22 ns |
| Width | 5.21 mm |
| Unit weight | 38 g |
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