IPW65R080CFDAFKSA1
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Specification
Qg-栅极电荷 | 161 nC |
Vds-漏源极击穿电压 | 650 V |
Rds On-漏源导通电阻 | 72 mOhms |
工作温度范围 | - 40 C~+ 150 C |
宽度 | 5.21 mm |
长度 | 16.13 mm |
Pd-功率耗散 | 391 W |
高度 | 21.1 mm |
封装 | TO-247-3 |
Vgs - 栅极-源极电压 | 20 V |
电路数量 | 1 Channel |
安装方式 | Through Hole |
Id-连续漏极电流 | 43.3 A |
晶体管极性 | MOSFET |
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