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IPW65R190C7XKSA1
Manufacturer:
Mfr. Part #:
IPW65R190C7XKSA1
Allchips #:
R001-IPW65R190C7XKSA1-1-H-0000-X-Y
Description:
MOSFET N-CH 650V 20.2A TO247
ECAD Model:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | Through Hole |
| Package / case | TO-247-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - continuous drain current | 13 A |
| Rds On - Drain-Source On-Resistance | 168 mOhms |
| Vgs th - gate-source threshold voltage | 3 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 23 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 150 C |
| Configuration | Single |
| Qualifications | AEC-Q100 |
| Channel mode | Enhancement |
| Fall time | 9 ns |
| Height | 21.1 mm |
| Length | 16.13 mm |
| Pd - Power Dissipation | 72 W |
| Rise Time | 11 ns |
| Series | CoolMOS C7 |
| Factory packing quantity | 240 |
| Transistor type | 1 N-Channel |
| Typical shutdown delay time | 54 ns |
| Typical turn-on delay time | 11 ns |
| Width | 5.21 mm |
| Unit weight | 38 g |
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