IQE006NE2LM5CGATMA1
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Specification
Pd-功率耗散 | 89 W |
Id-连续漏极电流 | 298 A |
Qg-栅极电荷 | 28.5 nC |
Vds-漏源极击穿电压 | 25 V |
电路数量 | 1 Channel |
晶体管极性 | MOSFET |
Rds On-漏源导通电阻 | 0.65 mOhms |
封装 | PG-TTFN-9-1 |
工作温度范围 | - 55 C~+ 150 C |
Vgs - 栅极-源极电压 | 16 V |
安装方式 | SMD/SMT |
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