IRF135SA204
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Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-263-7 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 135 V |
Id - continuous drain current | 160 A |
Rds On - Drain-Source On-Resistance | 4.7 mOhms |
Vgs th - gate-source threshold voltage | 3 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 210 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Fall time | 56 ns |
Forward transconductance - minimum | 270 S |
Height | 4.4 mm |
Length | 10 mm |
Pd - Power Dissipation | 500 W |
Product | MOSFET |
Rise Time | 56 ns |
Factory packing quantity | 800 |
Types | N-Channel MOSFET |
Typical shutdown delay time | 140 ns |
Typical turn-on delay time | 20 ns |
Width | 9.25 mm |
Unit weight | 1.600 g |
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