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IRF3205ZLPBF
Manufacturer:
Mfr. Part #:
IRF3205ZLPBF
Allchips #:
R001-IRF3205ZLPBF-1-H-0000-X-Y
Description:
TO-262
ECAD Model:
Delivery:
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | Through Hole |
| Package / case | TO-262-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 55 V |
| Id - continuous drain current | 110 A |
| Rds On - Drain-Source On-Resistance | 6.5 mOhms |
| Vgs th - gate-source threshold voltage | 4 V |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 76 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 175 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 67 ns |
| Forward transconductance - minimum | 71 S |
| Height | 9.45 mm |
| Length | 10.2 mm |
| Pd - Power Dissipation | 170 W |
| Rise Time | 95 ns |
| Factory packing quantity | 50 |
| Transistor type | 1 N-Channel |
| Types | HEXFET Power MOSFET |
| Typical shutdown delay time | 45 ns |
| Typical turn-on delay time | 18 ns |
| Width | 4.5 mm |
| Unit weight | 2.084 g |
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