IRF3205ZPBF
In stock
- IRF3205ZPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 55 V |
Id - continuous drain current | 110 A |
Rds On - Drain-Source On-Resistance | 6.5 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 76 nC |
Configuration | Single |
Height | 15.65 mm |
Length | 10 mm |
Pd - Power Dissipation | 170 W |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Width | 4.4 mm |
Unit weight | 2 g |
Others include "IRF3205ZPBF" parts
The following parts include 'IRF3205ZPBF'
IRF3205ZPBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRF3205ZPBF
Analog Devices Inc
Learn More >
-
-
-
IRF3205ZPBF
Infineon
Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-220AB Tube
Learn More >
-
-
-
IRF3205ZPBF
Infineon
N沟道,55V,75A,6.5mΩ@10V
Learn More >
-
- View All Newest Products from Omron