IRF3610STRLPBF
In stock
- IRF3610STRLPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-263-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 103 A |
Rds On - Drain-Source On-Resistance | 9.3 mOhms |
Vgs th - gate-source threshold voltage | 2 V |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 150 nC |
Minimum working temperature | - 55 C |
The maximum working temperature | + 175 C |
Configuration | Single |
Channel mode | Enhancement |
Fall time | 43 ns |
Forward transconductance - minimum | 110 S |
Height | 4.4 mm |
Length | 10 mm |
Pd - Power Dissipation | 333 W |
Rise Time | 55 ns |
Factory packing quantity | 800 |
Transistor type | 1 N-Channel |
Typical shutdown delay time | 77 ns |
Typical turn-on delay time | 15 ns |
Width | 9.25 mm |
Unit weight | 2.200 g |
Others include "IRF3610STRLPBF" parts
The following parts include 'IRF3610STRLPBF'
IRF3610STRLPBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRF3610STRLPBF
Infineon
MOSFET N-CH 100V 103A D2PAK
Learn More >
-
- View All Newest Products from Omron