IRF3710PBF
In stock
- IRF3710PBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | Through Hole |
Package / case | TO-220-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 100 V |
Id - continuous drain current | 57 A |
Rds On - Drain-Source On-Resistance | 23 mOhms |
Vgs - gate-source voltage | 20 V |
Qg - gate charge | 86.7 nC |
Configuration | Single |
Height | 15.65 mm |
Length | 10 mm |
Pd - Power Dissipation | 200 W |
Factory packing quantity | 1000 |
Transistor type | 1 N-Channel |
Width | 4.4 mm |
Unit weight | 6 g |
Others include "IRF3710PBF" parts
The following parts include 'IRF3710PBF'
IRF3710PBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRF3710PBF
Infineon
N沟道,100V,57A,23mΩ@10V
Learn More >
-
-
-
IRF3710PBF
Infineon
N沟道,100V,57A,23mΩ@10V
Learn More >
-
-
-
IRF3710PBF
Infineon
N沟道,100V,57A,23mΩ@10V
Learn More >
-
- View All Newest Products from Omron