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IRF3710STRRPBF
Manufacturer:
Mfr. Part #:
IRF3710STRRPBF
Allchips #:
Z001-IRF3710STRRPBF-1-H-0000-X-N
Description:
MOSFET 100V 1 N-CH HEXFET 23mOhms 86.7nC
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Specification
| RoHS | yes |
| Technology | Si |
| Installation style | SMD/SMT |
| Package / case | TO-252-3 |
| Number of channels | 1 Channel |
| Transistor polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Id - continuous drain current | 57 A |
| Rds On - Drain-Source On-Resistance | 23 mOhms |
| Vgs - gate-source voltage | 20 V |
| Qg - gate charge | 86.7 nC |
| Minimum working temperature | - 55 C |
| The maximum working temperature | + 175 C |
| Configuration | Single |
| Channel mode | Enhancement |
| Fall time | 47 ns |
| Height | 2.3 mm |
| Length | 6.5 mm |
| Pd - Power Dissipation | 3.8 W |
| Rise Time | 58 ns |
| Factory packing quantity | 800 |
| Transistor type | 1 N-Channel |
| Types | HEXFET Power MOSFET |
| Typical shutdown delay time | 45 ns |
| Typical turn-on delay time | 12 ns |
| Width | 6.22 mm |
| Unit weight | 4 g |
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