IRF3808STRLPBF
In stock
- IRF3808STRLPBF Details
- Packing And Shipping
- Payment Method
- Quality Control
Specification
RoHS | yes |
Technology | Si |
Installation style | SMD/SMT |
Package / case | TO-252-3 |
Number of channels | 1 Channel |
Transistor polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 75 V |
Id - continuous drain current | 106 A |
Rds On - Drain-Source On-Resistance | 7 mOhms |
Vgs th - gate-source threshold voltage | 4 V |
Qg - gate charge | 220 nC |
The maximum working temperature | + 175 C |
Configuration | Single |
Fall time | 120 ns |
Forward transconductance - minimum | 100 S |
Height | 2.3 mm |
Length | 6.5 mm |
Pd - Power Dissipation | 200 W |
Rise Time | 140 ns |
Factory packing quantity | 800 |
Transistor type | 1 N-Channel |
Width | 6.22 mm |
Unit weight | 4 g |
Others include "IRF3808STRLPBF" parts
The following parts include 'IRF3808STRLPBF'
IRF3808STRLPBF Releted Information
- Hot sale
- Related Categories
- Popular Search
FEATURED PRODUCT SOMRON
-
-
IRF3808STRLPBF
Infineon
Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
IRF3808STRLPBF
Infineon
Trans MOSFET N-CH Si 75V 106A 3-Pin(2+Tab) D2PAK T/R
Learn More >
-
-
-
IRF3808STRLPBF
Infineon
表面贴装型 N 通道 75V 106A(Tc) 200W(Tc) D2PAK
Learn More >
-
- View All Newest Products from Omron