IRF5210PBF
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Specification
长度 | 10 mm |
宽度 | 4.4 mm |
晶体管极性 | MOSFET |
电路数量 | 1 Channel |
工作温度范围 | -55°C~175°C(TJ) |
封装 | TO-220AB |
Id-连续漏极电流 | 40 A |
Vgs - 栅极-源极电压 | 20 V |
Vds-漏源极击穿电压 | 100 V |
Pd-功率耗散 | 200 W |
Qg-栅极电荷 | 120 nC |
高度 | 15.65 mm |
安装方式 | Through Hole |
Rds On-漏源导通电阻 | 60 mOhms |
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